, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn switching transistor BSX20 features ? low current (max. 200 ma) ? low voltage (max. 15 v). applications ? high-speed saturated switching (and hf amplifier applications). description npn switching transistor in a to-18 metal package. pinning pin 1 2 3 description emitter base collector, connected to case fig.1 simplified outline (to-18) and symbol. quick reference data symbol vcbo vceo ic plot hfe ft toff parameter collector-base voltage collector-emitter voltage collector current (dc) total power dissipation dc current gain transition frequency turn-off time conditions open emitter open base tamb ^ 25 c lc=10ma; vce=1 v lc= 100ma; vce = 2 v lc= 10ma; vce = 10v; f= 100mhz lcon= 1 ma: 'bon = 3 ma; lboff = -1.5 ma min. - _ - - 40 20 500 - max. 40 15 200 360 120 - - 30 unit v v ma mw mhz ns nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
npn switching transistor BSX20 limiting values in accordance with the absolute maximum rating system (iec 134). symbol vcbo vceo vebo ic icm ibm plot tstg tj tamb parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature conditions open emitter open base open collector t < 1 0 us min. - - - - - - - -65 - -65 max. 40 15 4.5 200 300 100 360 + 150 200 + 150 unit v v v ma ma ma mw c ?c c thermal characteristics symbol rth j-a rfhj-c parameter thermal resistance from junction to ambient thermal resistance from junction to case conditions in free air value 480 150 unit k/w k/w characteristics tj = 25 "c unless otherwise specified. symbol !cbo iebo hpe vcesat vsesat cc ce fr parameter collector cut-off current emitter cut-off current dc current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency conditions ie = 0; vcb = 20 v |e = 0;vcb = 20v;tj = 150 c lc = 0; veb = 4 v lc= 10ma; vce= 1 v lc = 10 ma; vce = 1 v; tj = -55 "c lc= 100ma; vce = 2v lc= 10 ma; ib = 0.3 ma lc= 10 ma; ib= 1 ma lc= 100ma; lb=10ma lc= 10 ma; ib = 1 ma lc= 100ma; lb=10ma !e = ie = 0; vcb = 5v;f=1 mhz |c = ic = 0; veb = 1 v;f=1 mhz lc=10ma;vce=10v;f=100mhz min. - - - 40 20 20 - - - 700 - - - 500 typ. - - - - - - - - - - - - - 600 max. 400 30 100 120 - - 300 250 600 850 1.5 4 4.5 - unit na ua na mv mv mv mv v pf pf mhz
npn switching transistor BSX20 symbol parameter conditions switching times (between 10% and 90% levels) ton td tr toff ts tf ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time turn-on time delay time rise time turn-off time storage time fall time icon = 10 ma; lbon = 3 ma; taoff = -1 -5 ma; see fig. 2, test conditions a icon = 1 00 ma; lbon = 40 ma; lb0ff = -20 ma; see fig.2, test conditions b min. - - - - - - - - - - - _ typ. max. unit - - - \- - - - - _ - - - 10 4 6 30 15 15 13 3 10 35 25 10 ns ns ns ns ns ns ns ns ns ns ns ns seating plane 10 mm scale dimensions (millimetre dimensions are derived from the original inch dimensions)
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